Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

T. Hofmann, P. Kühne, S. Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert and V. Darakchieva
Applied Physics Letters 101, 192102 (2012)
Link: http://dx.doi.org/10.1063/1.4765351

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