Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate


G. Pozina, C. Hemmingsson, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, B. Monemar, L. Hultman and E. Janzén
Journal Applied Physics 104, 113513 (2008)
Link: http://dx.doi.org/10.1063/1.3028687

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