Hot-Wall MOCVD

Classic uses a proprietary, nitride process developed in a Hot-Wall MOCVD reactor. This technology is inherited from Linköping Univerisity’s successful development of both SiC and group III/N materials over the past 25 years. Thanks to the efficient heating of the gases and low thermal gradients manifest in the reactor, growth of very high quality III/N materials can be realized. This is particularly evidenced in the very high quality AlN nucleation layers that exhibit an extremely low Thermal Boundary Resistance (TBR).


Ultra-low Thermal Boundary Resistance (TBR)

The ultra-low TBR technique can largely reduce the heat accumulation in the GaN-SiC interfacial region, especially when the HEMT device is operating at elevated temperatures. The conventional TBR in the GaN-SiC interfacial region could cause up to ~40% additional temperature rise of the transistor channel temperature. By introducing the ultra-low TBR technique, we can decrease the additional temperature rise to a negligible level.


Isotope major SiC (ISOSiC), “Classic inside”

One of the biggest challenges with power RF devices is the device reliability. By reducing the operational temperature by 25 degrees C, the lifetime is increased by a factor of ten. Using ISOSiC substrates the thermal conductivity of the entire device structure can be enhanced by up to 25%, i.e. lowering the device temperature and thereby increasing the device reliability. Using “Classic inside” superior HEMT structures grown on ISOSiC will solve your problem once and for all.


State-of-the-art structural quality of GaN

The excellent structural quality of GaN epitaxial layers grown by Classic’s high-temperature process typically exhibits the X-ray rocking curve of GaN (102) peak below 200 arcsec, and threading dislocation density in the low 10³ cm⁻³ regime confirmed by TEM analysis. This is the best GaN crystalline quality in the world, which not only guarantees the GaN robustness but also reduces possibility of device failure due to structural defects.


Highly resistive C-doped and Fe-doped GaN buffer/template

Both the carbon and iron doping processes have been optimized to make GaN highly resistive without sacrificing on the structural quality. The dopant (C or Fe), doping level (low 10¹⁸cm to 10¹⁶cm⁻³) and doping profile in GaN layers can all be customized according to your need.


Our focus is AlGaN/GaN HEMT structures on SiC substrates using our ultra-low TBR and high channel mobility. Please contact us and specify your epitaxial structure.


We devote ourselves to develop highly competitive GaN epitaxial wafers to the industry.