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Our products are based on AlGaN/GaN HEMT epitaxial structures grown on SiC and GaN substrates. High-quality GaN templates are also available. The standard sizes are 3-inch and 4 inch epiwafers.

Contact us for inqueries about the AlGaN/GaN heterostructure parameters, dopant and doping profiles used in the GaN buffer isolation layer, and our guaranteed overall crystalline quality and 2DEG properties of the epiwafers.

To support your development work, we are committed to provide customized solutions and swift manufacturing feedback.

Please fill in the form below to receive our data sheet to your email.

 


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